A 2-D/3-D Schrödinger-Poisson Drift-Diffusion Numerical Simulation of Radially-Symmetric Nanowire MOSFETs

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SEU Sensitivity of Junctionless SOI MOSFETs-based 6T SRAM Cells Investigated by 3D TCAD Simulation

International audienceThe Junctionless (JL) Single-Gate SOI (JL-SOI) technology is potentially interesting for future ultra-scaled devices, due to a simplified technological process and reduced leakage currents. In this work, we investigate, for the first time, the radiation sensitivity of JL-SOI MOSFETs and 6T SRAM cells. A detailed comparison with JL Double-Gate (JL-DG), inversion-mode (IM) SOI (IM-SOI), and IM-DG MOSFETs has been performed. 3-D simulations indicate that JL-SOI MOSFETs and SRAM cells are naturally less immune to radiation than the other structures

Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation

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Susceptibility of Group-IV and III-V Semiconductor-Based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations

New semiconductor materials are envisaged in numerous high-performance applications for which the expected device or circuit performances cannot be achieved with silicon. In this context of growing use of new and specific semiconductors, the question of their susceptibility to natural radiation, primarily to atmospheric neutrons, is posed for high-reliability-level application domains. This numerical simulation work precisely examines nuclear events resulting from the interaction of atmospheric neutrons at the terrestrial level with a target layer composed of various group-IV and III-V semiconductor materials including silicon, germanium, silicon carbide, carbon-diamond, gallium arsenide, and gallium nitride materials. Using extensive Geant4 simulations and in-depth data analysis, this study provides an accurate and fine comparison between the neutron interaction responses of these different semiconductors in terms of nuclear processes, recoil products, secondary ion production, and fragment energy distributions. Implications of these results on the rate of single-event transient effects at the device or circuit level are also discussed

Atmospheric radiation and COTS at ground level

International audienceThis tutorial will survey single event effects (SEE) induced by terrestrial cosmic rays on current commercial CMOS technologies. After describing the natural radiation environment at ground and atmospheric levels, the tutorial will describe the physics of SEEs, from the main mechanisms of interaction between atmospheric radiation (neutrons, protons, muons) and circuit materials to the electrical response of transistors, cells and complete circuits. SEE characterization using accelerated and real-time tests will be examined, as well as modeling and numerical simulation issues. Special emphasis will finally concern the radiation response of advanced technologies, including deca-nanometer bulk, FD-SOI and FinFET families

3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation

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3D Simulation of Heavy Ions-Induced Single-Event-Transient Effects in Symmetrical Dual-Material DG MOSFET

International audienceDual-Material Gate Double-Gate (DMDG) structure is promising for future ultra-scaled devices thanks to its capability to reduce SCEs and HCEs. This is due to a step in the surface-potential profile which screens the source side of the channel from drain-potential variations and reduces the drain electric field. In this work, we investigate the DMDG sensitivity to single-event transients. The impact of dual gate materials on the bipolar gain is particularly addressed. We show that DMDG is naturally less radiation immune than usual single-material DG (SMSG) devices

A Compact Model for the Ballistic Subthreshold Current in Ultra-Thin Independent Double-Gate MOSFETs

International audienceWe present an analytical model for the subthreshold characteristic of ultra-thin Independent Double-Gate (IDG) MOSFET working in the ballistic regime. This model takes into account short-channel effects, quantization effects and source-to-drain tunneling (WKB approximation) in the expression of the subthreshold drain current. Important device parameters, such as off-state current or subthreshold swing, can be easily evaluated through this full analytical approach. The model can be successfully implemented in a TCAD circuit simulator for the simulation of IDG MOSFET based-circuits

Improvement of current-control induced by oxide crenel in very short field-effect-transistor

A 2D quantum ballistic transport model based on the non-equilibrium Green's function formalism has been used to theoretically investigate the effects induced by an oxide crenel in a very short (7 nm) thin-film metal-oxide-semiconductor-field-effect-transistor. Our investigation shows that a well adjusted crenel permits an improvement of on-off current ratio Ion/Ioff of about 244% with no detrimental change in the drive current Ion. This remarkable result is explained by a nontrivial influence of crenel on conduction band-structure in thin-film. Therefore a well optimized crenel seems to be a good solution to have a much better control of short channel effects in transistor where the transport has a strong quantum behavior

Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation

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